? semiconductor components industries, llc, 2013 september, 2013 ? rev. 3 1 publication order number: nss40301mz4/d nss40301mz4 bipolar power transistors 40 v, 3.0 a, low v ce(sat) npn transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc?dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? complement to nss40300mz4 series ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cb 40 vdc emitter?base voltage v eb 6.0 vdc base current ? continuous i b 1.0 adc collector current ? continuous i c 3.0 adc collector current ? peak i cm 5.0 adc total power dissipation total p d @ t a = 25 c (note 1) to t a l p d @ t a = 25 c (note 2) p d 2.0 0.80 w operating and storage junction temperature range t j , t stg ? 55 to + 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. mounted on 1? sq. (645 sq. mm) collector pad on fr?4 bd material. 2. mounted on 0.012? sq. (7.6 sq. mm) collector pad on fr?4 bd material. sot?223 case 318e style 1 marking diagram schematic c 2, 4 b 1 e 3 top view pinout c ce b 4 123 npn transistor 3.0 amperes 40 volts, 2.0 watts see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information pin assignment http://onsemi.com 1 40301 ayw a = assembly location y year w = work week 40301 = specific device code = pb?free package 3 2 1 4
nss40301mz4 http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case junction?to?ambient on 1? sq. (645 sq. mm) collector pad on fr?4 bd material junction?to?ambient on 0.012? sq. (7.6 sq. mm) collector pad on fr?4 bd material r ja r ja 64 155 c/w maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter sustaining voltage (i c = 10 madc, i b = 0 adc) v ceo(sus) 40 ? ? vdc emitter?base voltage (i e = 50 adc, i c = 0 adc) v ebo 6.0 ? ? vdc collector cutoff current (v cb = 40 vdc) i cbo ? ? 100 nadc emitter cutoff current (v be = 6.0 vdc) i ebo ? ? 100 nadc on characteristics (note 3) collector?emitter saturation voltage (i c = 0.5 adc, i b = 50 madc) (i c = 1.0 adc, i b = 20 madc) (i c = 3.0 adc, i b = 0.3 adc) v ce(sat) ? ? ? ? ? ? 0.050 0.100 0.200 vdc base?emitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) v be(sat) ? ? 1.0 vdc base?emitter on voltage (i c = 1.0 adc, v ce = 2.0 vdc) v be(on) ? ? 0.9 vdc dc current gain (i c = 0.5 adc, v ce = 1.0 vdc) (i c = 1.0 adc, v ce = 1.0 vdc) (i c = 3.0 adc, v ce = 1.0 vdc) h fe 220 200 100 ? ? ? 500 ? dynamic characteristics output capacitance (v cb = 10 vdc, f = 1.0 mhz) c ob ? 25 ? pf input capacitance (v eb = 5.0 vdc, f = 1.0 mhz) c ib ? 170 ? pf current?gain ? bandwidth product (note 4) (i c = 500 ma, v ce = 10 v, f test = 1.0 mhz) f t ? 215 ? mhz 3. pulse test: pulse width 300 s, duty cycle 2%. 4. f t = |h fe | ? f test figure 1. power derating t j , temperature ( c) 150 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 p d , power dissipation (w) t c 125 t a
nss40301mz4 http://onsemi.com 3 typical characteristics figure 2. dc current gain figure 3. dc current gain i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 10 1 0.1 0.01 0.001 0 100 200 300 500 600 700 figure 4. collector?emitter saturation voltage figure 5. collector?emitter saturation voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.001 0.01 0.1 1 10 1 0.1 0.01 0.001 0.01 0.1 1 figure 6. collector saturation region figure 7. v be(on) voltage i b , base current (a) i c , collector current (a) 0.001 0.0001 0.01 0.1 1 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 1.2 h fe , dc current gain h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v ce(sat) , collector?emitter saturation voltage (v) v ce(sat) , collector?emitter saturation voltage (v) v be(on) , emitter?base voltage (v) v ce = 1 v 150 c ?55 c 25 c v ce = 4 v 150 c ?55 c 25 c 400 i c /i b = 10 150 c ?55 c 25 c i c /i b = 50 150 c ?55 c 25 c 0.01 0.1 1.0 0.8 1.0 v ce = 2 v 150 c ?55 c 25 c i c = 3 a 0.1 a 1 a 0.5 a 2 a
nss40301mz4 http://onsemi.com 4 typical characteristics figure 8. base?emitter saturation voltage figure 9. base?emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 1.4 figure 10. input capacitance figure 11. output capacitance v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 70 60 50 40 30 20 10 0 0 20 40 60 80 100 figure 12. current?gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector?emitter voltage (v) 10 0.1 0.01 0.001 0 240 40 120 200 100 10 1 0.01 0.1 1 10 v be(sat) , emitter?base saturation voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) f ta u , current bandwidth product (mhz) i c , collector current (a) 0.4 0.6 0.8 1.0 1.2 i c /i b = 10 150 c ?55 c 25 c i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 1.4 v be(sat) , emitter?base saturation voltage (v) 0.4 0.6 0.8 1.0 1.2 i c /i b = 50 150 c ?55 c 25 c t j = 25 c f test = 1 mhz t j = 25 c f test = 1 mhz 80 160 t j = 25 c f test = 1 mhz v ce = 10 v 0.5 ms 10 ms 100 ms 1 ms 400 450 8 7 90 80 1
nss40301mz4 http://onsemi.com 5 ordering information device package shipping ? NSS40301MZ4T1G sot?223 (pb?free) 1,000 / tape & reel nsv40301mz4t1g* sot?223 (pb?free) 1,000 / tape & reel nss40301mz4t3g sot?223 (pb?free) 4,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable
nss40301mz4 http://onsemi.com 6 package dimensions sot?223 (to?261) case 318e?04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nss40301mz4/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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